NDF02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
4.0
4.0
3.5
3.0
7.0 V
3.5
3.0
V DS = 25 V
2.5
2.0
1.5
1.0
V GS = 10 V
6.5 V
6.0 V
2.5
2.0
1.5
1.0
T J = 25 ° C
0.5
0.0
0.0
5.5 V
5.0 V
5.0 10.0 15.0 20.0
25.0
0.5
0.0
3
T J = 150 ° C
T J = ? 55 ° C
4 5 6 7 8 9
10
6.00
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
5.25
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
5.75
5.50
5.25
5.00
4.75
4.50
4.25
4.00
I D = 1 A
T J = 25 ° C
5.00
4.75
4.50
4.25
4.00
V GS = 10 V
T J = 25 ° C
3.75
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
3.75
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
2.3
2.5
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 3. On ? Region versus Gate ? to ? Source
Voltage
I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance versus Drain
Current and Gate Voltage
2.50
2.25
2.00
I D = 1 A
V GS = 10 V
1.15
1.10
I D = 1 mA
1.75
1.50
1.25
1.00
0.75
0.50
1.05
1.00
0.95
0.25
? 50
? 25
0
25
50
75
100
125
150
0.90
? 50
? 25
0
25
50
75
100
125
150
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
T J , JUNCTION TEMPERATURE ( ° C)
Figure 6. BV DSS Variation with Temperature
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相关代理商/技术参数
NDF03N60Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 600 V, 3.3 
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NDF03N60ZH 功能描述:MOSFET NFET 600V 3A 3.3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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NDF03N80ZH 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N.Channel Power MOSFET
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NDF04N60ZG 功能描述:MOSFET NFET T0220FP 600V 4A 1.8R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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